Title of article :
Enhancement of C-49 to C-54 TiSi phase transformation on 2 001/Si with an ultrathin TiN seed layer
Author/Authors :
Y.C. Peng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
5
From page :
336
To page :
340
Abstract :
An ultrathin TiN seed layer was used to reduce the transformation temperature of C-49 to C-54 TiSi2. The fine-grained structure of C-49 TiSi2 was induced by the interposing TiN layer. Since C-54 TiSi2 nucleated more easily at the grain boundaries of fine-grained C-49 structure, the phase transformation temperature was reduced. q1999 Elsevier Science B.V. All rights reserved.
Keywords :
C-54 TiSi2 , Phase transformation temperature , Fine-grained structure , Interposing TiN layer , C-49 TiSi2
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
995318
Link To Document :
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