Title of article :
Growth of Ga In As Sb solid solutions from the 1yx x y 1yy five-component Ga–In–As–Sb–Pb melt by liquid phase epitaxy
Author/Authors :
E.V. Kunitsyna )، نويسنده , , I.A. Andreev، نويسنده , , N.A. Charykov، نويسنده , , Yu.V. Solov’ev، نويسنده , , Yu.P. Yakovlev، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
4
From page :
371
To page :
374
Abstract :
Gallium antimonide GaSb.and its solid solutions are widely used in optoelectronic devices for the ecologically important spectral range 2–5 mm. In this paper we discuss a novel approach of using neutral solvents such as Pb.in GaInAsSb growth process. We employed the excess thermodynamic functions and linear combinations of chemical potentials EFLCP.thermodynamic model to calculate the melt–solid phase diagrams in the Ga–In–As–Sb–Pb system. q1999 Elsevier Science B.V. All rights reserved.
Keywords :
EFLCP thermodynamic model , Ga1yxInxAsySb1yx , Ga–In–As–Sb–Pb system , Gibbs energy
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
995325
Link To Document :
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