Wetting problems for coatings on windshields

We have calculated the wetting angle as function of doping concentration for water on ITO In2O3:Sn.and determined the critical concentration for spreading. The calculation relies on the dielectric properties of water and the doped semiconductor. We have modelled these properties. For water we have used experimental optical data and the temperature dependence of the experimental surface tension as input to the modelling. The modelling of the doped semiconductor is based on a model by Penn wD.R. Penn, Phys. Rev. 128 1962.2093x, extended to take into account the contribution from the free carriers. q1999 Elsevier Science B.V. All rights reserved