Heteroepitaxy of 3C-SiC using triode plasma enhanced chemical vapor deposition on Si substrates without buffer layer

The epitaxial growth of cubic-SiC films on Si substrates without carbonization layer has been studied using triode plasma enhanced chemical vapor deposition method. Experiments were carried out using dimethylsilane and hydrogen gas at low substrate temperatures 900–11008C.. Hydrogen-terminated Si 100.and 111.substrates were prepared by immersion in boiling ultrapure water after aqueous HF etching. To achieve the epitaxial growth using plasma process, negative grid bias was applied to suppress the electron temperature in the growth region below a grid electrode. With supply of the source gas, substrate temperature was rapidly raised from 5008C to growth temperatures, followed by the epitaxial growth. Using the above experimental procedure, epitaxial SiC films with smooth surface were obtained. q1999 Elsevier Science B.V. All rights reserved.