Epitaxial growth of c-GaN in the afterglow plasma region controlled by magnetic field using ECR plasma enhanced MOCVD

The growth of c-GaN epitaxial films on GaAs substrates in the afterglow plasma region controlled by magnetic field was investigated using ECR plasma MOCVD. Measurement of plasma parameters such as electron temperature, plasma space potential and floating potential in the mirror and cusp magnetic fields in growth chamber was carried out. Dependence of the crystallinity and crystal orientation of c-GaN on the magnetic field in the afterglow plasma region was investigated. The relationship between the crystallinity of c-GaN and the plasma parameters was considered. q1999 Elsevier Science B.V. All rights reserved