Low frequency noise measurements on TiNrn-Si Schottky diodes

The deposition temperature dependence of the characteristics of TiN rn-Si Schottky diodes fabricated via reactive x magnetron sputtering, is studied through the current–voltage characterization and the low frequency excess noise measurements. As the deposition temperature was varied from room temperature up to 4008C, both the ideality factor of the diode and the power spectral density of the noise current decreased. The analysis of the low frequency noise shows that the noise due to the trapping and detrapping at the interface due to the random walk of electrons via the modulation of the barrier height dominates the noise due to the mobility fluctuation, except at very low current levels, in these non-ideal diodes. It is found that the interface states density could be reduced by almost an order of magnitude by raising the deposition temperature up to 4008C from room temperature. q1999 Elsevier Science B.V. All rights reserved