Title of article :
Epitaxial growth and interface structure of PbS on InP 110/
Author/Authors :
A.B. Preobrajenski، نويسنده , , T. Chasse and H. Peisert، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
6
From page :
394
To page :
399
Abstract :
We have investigated layer growth mode, interface chemistry and morphology of PbS layers on InP 110.using XPS and LEED. At room temperature, the interface has been observed to be abrupt and non-reactive. The growth mode is layer-like but proceeds in a multilayer fashion. Epitaxial PbS layers have been grown with the 001.face parallel to InP 110.and good lattice match along thew1 1 0xorientation of the substrate surface. Along thew001xsurface direction, an incommensurate lattice match has been observed. Upon heating of the substrate during PbS deposition 3D island growth occurs beyond an initial multilayer stage of growth. q1999 Elsevier Science B.V. All rights reserved
Keywords :
PbS , InP , XPS , LEED , Semiconductor interface , epitaxy
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
995330
Link To Document :
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