Title of article
Epitaxial growth and interface structure of PbS on InP 110/
Author/Authors
A.B. Preobrajenski، نويسنده , , T. Chasse and H. Peisert، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
394
To page
399
Abstract
We have investigated layer growth mode, interface chemistry and morphology of PbS layers on InP 110.using XPS and
LEED. At room temperature, the interface has been observed to be abrupt and non-reactive. The growth mode is layer-like
but proceeds in a multilayer fashion. Epitaxial PbS layers have been grown with the 001.face parallel to InP 110.and good
lattice match along thew1 1 0xorientation of the substrate surface. Along thew001xsurface direction, an incommensurate
lattice match has been observed. Upon heating of the substrate during PbS deposition 3D island growth occurs beyond an
initial multilayer stage of growth. q1999 Elsevier Science B.V. All rights reserved
Keywords
PbS , InP , XPS , LEED , Semiconductor interface , epitaxy
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995330
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