• Title of article

    Epitaxial growth and interface structure of PbS on InP 110/

  • Author/Authors

    A.B. Preobrajenski، نويسنده , , T. Chasse and H. Peisert، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    6
  • From page
    394
  • To page
    399
  • Abstract
    We have investigated layer growth mode, interface chemistry and morphology of PbS layers on InP 110.using XPS and LEED. At room temperature, the interface has been observed to be abrupt and non-reactive. The growth mode is layer-like but proceeds in a multilayer fashion. Epitaxial PbS layers have been grown with the 001.face parallel to InP 110.and good lattice match along thew1 1 0xorientation of the substrate surface. Along thew001xsurface direction, an incommensurate lattice match has been observed. Upon heating of the substrate during PbS deposition 3D island growth occurs beyond an initial multilayer stage of growth. q1999 Elsevier Science B.V. All rights reserved
  • Keywords
    PbS , InP , XPS , LEED , Semiconductor interface , epitaxy
  • Journal title
    Applied Surface Science
  • Serial Year
    1999
  • Journal title
    Applied Surface Science
  • Record number

    995330