• Title of article

    A study of tellurium adsorption processes on silicon by ellipsometry, RHEED and AES methods

  • Author/Authors

    D.N. Pridachin )، نويسنده , , M.V. Yakushev، نويسنده , , Yu.G. Sidorov، نويسنده , , V.A. Shvets، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    5
  • From page
    485
  • To page
    489
  • Abstract
    The adsorption processes of tellurium and arsenic on Si 1134has been studied using ex-situ spectroscopic ellipsometry SE., reflection high-energy electron diffraction RHEED.and Auger electron spectroscopy AES.. It was established that tellurium did not form a continuous adlayer and can exist on the silicon surface only as islands and only for temperatures not higher than 4508C. q1999 Elsevier Science B.V. All rights reserved
  • Keywords
    Tellurium , Silicon , adsorption
  • Journal title
    Applied Surface Science
  • Serial Year
    1999
  • Journal title
    Applied Surface Science
  • Record number

    995348

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=995348