A study of tellurium adsorption processes on silicon by ellipsometry, RHEED and AES methods

The adsorption processes of tellurium and arsenic on Si 1134has been studied using ex-situ spectroscopic ellipsometry SE., reflection high-energy electron diffraction RHEED.and Auger electron spectroscopy AES.. It was established that tellurium did not form a continuous adlayer and can exist on the silicon surface only as islands and only for temperatures not higher than 4508C. q1999 Elsevier Science B.V. All rights reserved