Effect of plasma-to-film interaction on electron field emission properties of pulsed laser deposited diamond-like-carbon films

In this paper, we systematically investigate the interaction of radio frequency RF.induced plasma Ar, N2or O2.with the DLC films prepared by pulsed laser deposition process. The argon plasma modifies the characteristics of the DLC films mainly through the ionic bombardment, resulting in significant damage on the DLC films. By contrast, the nitrogen and oxygen plasma interact with the DLC films chemically such that the sp3-to-sp2 bond ratio is altered. The modification on the electron field emission of the DLC films is proportional to the density of the plasma. The DLCrCrrSi films 0.4 mm. deposited at 2008C possess good emission current density as Je.s45 mArcm2, with turn-on field E0.s7.2 Vrmm, and the emission properties increase to Je.Ars942 mArcm2, with turn-on field E0.Ars6.8 Vrmm, after plasma treatment. q1999 Elsevier Science B.V. All rights reserved.