• Title of article

    Thickness and energy dependence of secondary ion emissions from Langmuir–Blodgett films

  • Author/Authors

    T. Hoshi، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    5
  • From page
    614
  • To page
    618
  • Abstract
    Using Cd arachidate films formed on Ag and Si substrates, secondary ion intensities were investigated by TOF-SIMS. The intensities ofwMqHxq,wMqCdxq and Ag cationized ions from samples on the Ag and Si substrates were found to change as a function of LB film thickness, as well as the primary beam energy. The intensities ofwMqHxq andwMqCdxq were seen to be 1. the highest at a one-layer LB film, 2. to decrease as the LB film becomes thicker, 3. change slightly with the primary ion beam energy. On the other hand, the intensities of Ag cationized secondary ions were almost constant with the changes of LB thickness and the energy of the primary ion beam, after normalized by Agq intensity. The results were discussed in terms of the energy transfer of the primary beam to the LB films, the property of the substrate materials, and the strength of chemical bondings. q1999 Published by Elsevier Science B.V. All rights reserved.
  • Keywords
    ToF-SIMS , Secondary ion emissions , Langmuir–Blodgett films
  • Journal title
    Applied Surface Science
  • Serial Year
    1999
  • Journal title
    Applied Surface Science
  • Record number

    995372