Title of article :
Quantization of the free charge carriers on InSb at room temperature
Author/Authors :
A.M. Yafyasov )، نويسنده , , I.M. Ivankiv، نويسنده , , V.B. Bogevolnov، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
4
From page :
629
To page :
632
Abstract :
A new method of self-consistent quantum calculation of the density of the space charge near the surface of a crystal is carried out for the semiconductor with nonparabolic Kane.dispersion law of bands. The remarkable feature is the solution of the Schro¨dinger equation for electrons and holes in the energy range, including both bound energy states and states in the continuum. Theoretical voltage–capacitance dependence is calculated and coincides with experimental data. The dependence of the electron mass and surface mobility from the value of surface potential are analyzed. q1999 Elsevier Science B.V. All rights reserved
Keywords :
Surface mobility , Effective mass , Voltage–capacitance , InSb , Self-consistent quantum calculation
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
995375
Link To Document :
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