Influence of strain effects on hole-subband resonances in GaAsrInAlAs superlattices

We have investigated the influence of strain effects on hole-subband resonances in GaAsrInAlAs strained superlattices. The samples consist of the same superlattice structure with different buffer layers. We have found that the photocurrent– voltage characteristics exhibit peaky structures due to the hole-subband resonance and that the resonant conditions are modified by the difference in the lattice constant of the buffer layers. The resonant conditions have been discussed from the subband-energy calculation based on an effective-mass approximation taking into account the strain effects. q1999 Elsevier Science B.V. All rights reserved