Title of article
Molecular dynamics simulation of the isotopic mass effect in zero-fluence and low-bombarding-energy sputtering
Author/Authors
Li-Ping Zheng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
215
To page
218
Abstract
Nonstoichiometric effects in the zero-fluence sputtering of a natural Cu 111.target 69.1% 63Cu, 30.9% 65Cu. irradiated
with normally incident Arq ions from 50 to 1000 eV have been studied by use of a molecular dynamics MD.simulation
code. Calculations show that the isotopic ratios in the normal direction and at oblique angles, their difference, and the total
isotopic ratio increase as the bombarding energy decreases. q1999 Elsevier Science B.V. All rights reserved
Keywords
Molecular dynamics simulation , Isotopic mass effect , Zero-fluence , Low-bombarding-energy sputtering
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995404
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