Process-induced modification to the surface of crystalline GaAs measured by photometry

The photometric chemical analysis technique was used to evaluate the non-interconnected Ga and As produced at the surface of crystalline GaAs by typical processes of semiconductor technology including ultrasonic vibrations, dc and microwave heating and thermal annealing. It is shown that such low energy treatments considerably change the amount of ‘free’ Ga and As measured by photometry. The preferred mechanism seems to be point defect motion, which stimulate creeping effects as a result of the absorbed energy. q1999 Elsevier Science B.V. All rights reserved