Title of article :
Static SIMS: metastable decay and peak intensities
Author/Authors :
I.S. Gilmore، نويسنده , , M.P. Seah، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
The decay of a metastable ion to a daughter ion along the flight path of a time-of-flight ToF.mass spectrometer leads to
well-defined peak structure in the mass spectrum. Through interference, these daughter ion peaks can reduce the detection
limits in static SIMS and lead to uncertainties in both the true peak area intensity and the peak position. The area of the peak
for the metastable parent ion is reduced to an extent which depends on its half life, the analyser design and the chosen
instrument settings. These intensity changes directly affect the quality and reproducibility of spectra. The decay of
metastable ions is analysed for the reference material, PTFE, used in a recent inter-laboratory study. A method is developed,
for a ToF reflectron analyser, to characterise the decay process of the parent ion so that both parent and daughter are
accurately identified. This method involves measuring the transit time shift of the metastable peak as a function of the
reflectron voltage. To illustrate the method, the mass of the C4F4q parent ion is determined to an uncertainty of 0.6 amu.
This parent ion decays by emission of CF20 to C3F2q. The choice of instrument parameters to avoid interference from
metastable peaks and to improve data transferability is discussed. Crown Copyright q1999 Published by Elsevier Science
B.V. All rights reserved.
Keywords :
Static SIMS , Ion fragmentation , Metastable decay
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science