Application of the final state Auger parameter imperfect screening model for the Si L VV spectrum of porous silicon

In this paper we have applied the final state Auger parameter imperfect screening model for the Si L23VV spectrum to study the local electronic structure close to the surface layer of porous silicon prepared by anodic etching. This application has allowed to reveal the lower local high-frequency dielectric constant, conduction band electron concentration, higher band gap for porous silicon in comparison with these values for the intrinsic single crystal silicon and to evaluate the size of the silicon particles. Comparison of calculated band gap values with known one at the same silicon particle sizes have allowed us to propose the higher effective density of states in conduction band andror in valence band for porous silicon in comparison with these values for the single crystal silicon. q1999 Elsevier Science B.V. All rights reserved.