Title of article :
Local charge redistribution at potassium adsorption on the
Si 111/7=7 surface: a scanning tunneling microscopy study
Author/Authors :
A. Watanabe )، نويسنده , , M. Naitoh، نويسنده , , S. Nishigaki، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
The adsorption process of potassium on the Si 111.7=7 surface has been studied by scanning tunneling microscopy
STM.. The adsorption of K proceeds in two stages. In the first stage K atoms adsorb ionically with their s-states above EF
and the charge transfer occurs efficiently on the faulted halves. The first adlayer develops to the entire faulted and unfaulted
regions with the K-induced states above EF. At higher coverages the second stage., K atoms tend to form neutral clusters
preferentially in faulted regions. The electronic structure around the clusters is markedly modified, which suggests a local
charge redistribution. The STM observations well explain measured work function variation. q1999 Elsevier Science B.V.
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Keywords :
Scanning tunneling microscopy , Surface electronic structure , adsorption , potassium , Silicon
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science