Title of article
Beam characteristics of a high-gain avalanche rushing amorphous photoconductor field-emitter image sensor
Author/Authors
Masakazu Nanba، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
6
From page
251
To page
256
Abstract
A new type of image sensor that uses a field emitter array FEA.and a high-gain avalanche rushing amorphous
photoconductor HARP.target, with a mesh electrode inserted between them, has been designed and tested. The effects of
the voltage and position of the electrode were investigated in a vacuum chamber. The resolution and dynamic range were
improved by applying an adequate mesh voltage. The voltage needed for the mesh electrode was decreased by reducing the
distance between the FEA and the electrode. Most of the electrons emitted from the FEA are captured by the mesh electrode
and therefore contribute nothing to the read-out of the signal on the target. The mesh electrode structure thus needs further
study. In addition, the decelerating electric field formed between the mesh and target needs to be considered because it
spreads the electron beam, thus degrading the resolution and dynamic range of the device. q1999 Elsevier Science B.V. All
rights reserved.
Keywords
Field-emitter array FEA. , Field-emitter image sensor FEIS. , Mesh electrode , image sensor , High-gain avalanche rushing amorphousphotoconductor HARP. , Electron beam spreading
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995606
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