Characterization of RuO films prepared by rf reactive magnetron 2 sputtering

Ruthenium dioxide RuO2.films have been prepared by rf reactive magnetron sputtering at different oxygen partial pressures and total sputtering pressures. The films have been characterized by scanning electron microscopy SEM., X-ray diffraction XRD.and electrical conductivity. The films prepared at low oxygen partial pressure and total pressure show a strong preferred orientation along the 110.direction. As both pressures increase, the peak intensity decrease. All the films are subject to a compressive stress. As the total pressure is decreased and the oxygen partial pressure is increased, the stress increases. When the total pressure is lower than 6=10y3 mbar and the oxygen partial pressure is higher than 1=10y3 mbar, the films peeled off automatically from the substrate because of the high stress. The films prepared at high oxygen partial pressure and high total pressure have a rough surface and those prepared at low pressure show smooth surface. In this paper, these phenomena have been discussed. In addition, the electrical properties of the films are also discussed. q1999 Elsevier Science B.V. All rights reserved