Title of article :
SIMS study on the initial oxidation process of AlN ceramic
substrate in the air
Author/Authors :
Ruifeng Yue، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Abstract :
Secondary ion mass spectrometry SIMS.and X-ray diffraction XRD.measurement were employed to study the initial
oxidation process of AlN ceramic substrate in the air at 850–11008C. The results show that there is already a very thin
O-rich layer in the surface region of untreated AlN ceramic substrate. When the sample is annealed for 10 min, the O-rich
layer becomes thicker rapidly with the increasing of annealing temperature. When it is annealed at 11008C for 20 min, a
continuous oxide layer is formed. In the end, combined with chemical thermodynamics, the initial oxidation mechanism near
the surface of AlN substrate is discussed. q1999 Elsevier Science B.V. All rights reserved
Keywords :
Secondary ion mass spectrometry , AlN ceramics , moderatedielectric constant and thermal expansion , matchingthat of silicon w1x. In its applied field and during itspreparation , the) Corresponding , the common concern has been whateffect can oxygen bring on AlN ceramics. Oxygen isthe main impurity dissolved in the AlN lattice , Oxidation1. IntroductionAlN ceramics has recently been receiving recognitionas a promising material in microelectronic packaging.It has such advantages over other materials inpackaging as high thermal conductivity
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
