CeO on Si 111/7=7 and Si 111/–H 1=1, an interface study by 2 high-resolution photoelectron spectroscopy

The formation of the CeO2–Si 111.interface was studied by high-resolution photoelectron spectroscopy. It is shown that CeO2 and Si 111.forms a highly reactive interface with a strong interdiffusion of Si into the CeO2. A passive silicon surface formed by saturating the Si dangling bonds with hydrogen is considerably less reactive. Defects on the surface, however, act as nucleations centres for reactions of a Si:Ce:O matrix. Oxygen leaves the surface at about 8008C and at 10008C a surface reconstruction of Si 111.–Ce 2=2r63=63 is formed. q1999 Elsevier Science B.V. All rights reserved