Author/Authors :
K.، Takayama, نويسنده , , K.، Yatsui, نويسنده , , Jiang، Weihua نويسنده , , M.، Akemoto, نويسنده , , E.، Nakamura, نويسنده , , N.، Shimizu, نويسنده , , A.، Tokuchi, نويسنده , , S.، Rukin, نويسنده , , V.، Tarasenko, نويسنده , , A.، Panchenko, نويسنده ,
Abstract :
Power semiconductor devices, such as insulated-gate bipolar transistors, metal-oxide-semiconductor field-effect transistors, and staticinduction thyristors, are used in different kinds of pulsed power generators developed for different applications. In addition, the semiconductor opening switch is found to have very effective applications in pulsed power generation by inductive energy storage. Semiconductor switches have greatly extended the scales of pulsed power parameters, especially in repetition rate and lifetime. They have also enabled new areas of pulsed power applications, such as accelerators, flue-gas treatment, and gas lasers.
Keywords :
pulse generation , power semiconductor switches , pulsed power systems , metal-oxide-semiconductor(MOS) devices