Characterisation of defects in ion implanted SiC by slow positron implantation spectroscopy and Rutherford backscattering

SiC.1yx AlN.x has been prepared by ion co-implantation of Nqand Alqinto a 6H-SiC n-type wafer. The substrate temperature during implantation was varied from 2008C to 8008C in order to reduce the damage created by ion implantation. The obtained structures have been investigated by Slow Positron Implantation Spectroscopy SPIS. and Rutherford Backscattering and Ion Channeling RBSrC.. Both methods are sensitive to different kinds of defects and the results are complementary. The defect structures determined by SPIS and RBSrC are presented and the influence of the variation of the substrate temperature is discussed. q1999 Elsevier Science B.V. All rights reserved.