Title of article :
Time-of-flight positron-annihilation induced Auger electron spectroscopy studies of adsorption of oxygen on Si 100/
Author/Authors :
Toshiyuki Ohdaira، نويسنده , , Ryoichi Suzuki، نويسنده , , Tomohisa Mikado، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
4
From page :
260
To page :
263
Abstract :
The initial stage of adsorption of oxygen on Si 100. was studied by the time-of-flight positron-annihilation induced Auger electron spectroscopy TOF-PAES.. The adsorption of oxygen on top of Si 100. was investigated by the real-time measurements of oxygen and Si PAES intensities during and after O2 exposure. It was found that the initial stage of the top-site adsorption depends strongly on surface temperature, and that the top-site adsorption state is not stable. q1999 Elsevier Science B.V. All rights reserved.
Keywords :
Auger electron spectroscopy , Positron spectroscopy , Oxygen , Silicon , Oxidation
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
995746
Link To Document :
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