The electronic structures of epitaxial CrSi film prepared on 2 Si 111/ substrate

The valence band VB. electronic structures of CrSi2 were studied by synchrotron radiation photoemission. Overall features of the VB photoemission spectra measured at room temperature RT. and 20 K by using synchrotron radiation photon energy, hns20–120 eV.were similar. Two characteristic emissions were observed corresponding to the bonding and the nonbonding Cr-d partial density of states PDOS.in the CrSi2. The onset of the VB photoemission measured at 20 K was located at about 0.32 eV below Fermi level, due to the energy band gap of CrSi2 more than 0.32 eV. q1999 Elsevier Science B.V. All rights reserved