Microstructural analysis of hard amorphous carbon films deposited with high-energy ion beams

Hard amorphous carbon films produced using high-energy ca. 30 keV.ion beam deposition of CHq3 and CHq4 on silicon wafers, have been investigated by Positron Annihilation Spectroscopy PAS., the results are correlated with Raman Spectroscopy and Electrical Resistivity measurements. The microstructural modifications of the films as a function of the annealing temperature in the 300–6008C range have been studied. The evolution of the fractions of sp2 and sp3 bonds is described and related to the changes of the open volume defect distribution and the graphitization process. q1999 Elsevier Science B.V. All rights reserved