Title of article
Field emission from GaN deposited on the 100/Si substrate
Author/Authors
W. Czarczyn´ski )، نويسنده , , St. Lasisz، نويسنده , , M. Moraw، نويسنده , , R. Paszkiewicz، نويسنده , , M. Tlaczala، نويسنده , , Z. Znamirowski، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1999
Pages
4
From page
63
To page
66
Abstract
The field emission properties of a GaN on silicon have been investigated. A MOVPE method has been used to fabricate
the GaN layer. Emission measurements were performed at the pressure below 10y5 Pa. The Fowler–Nordheim plot shows a
linear relationship that indicates the emitted current to be of field emission origin. The effective work function estimated
from the slope of FN plot is very low. q1999 Elsevier Science B.V. All rights reserved.
Keywords
Gallium nitride , Field emission
Journal title
Applied Surface Science
Serial Year
1999
Journal title
Applied Surface Science
Record number
995792
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