Author/Authors :
W. Czarczyn´ski )، نويسنده , , St. Lasisz، نويسنده , , M. Moraw، نويسنده , , R. Paszkiewicz، نويسنده , ,
M. Tlaczala، نويسنده , , Z. Znamirowski، نويسنده ,
Abstract :
The field emission properties of a GaN on silicon have been investigated. A MOVPE method has been used to fabricate
the GaN layer. Emission measurements were performed at the pressure below 10y5 Pa. The Fowler–Nordheim plot shows a
linear relationship that indicates the emitted current to be of field emission origin. The effective work function estimated
from the slope of FN plot is very low. q1999 Elsevier Science B.V. All rights reserved.
