Title of article :
Saturated adsorption of PH on Si 100/:P and its application to 3 digital control of phosphorus coverage on Si 100/surface
Author/Authors :
Y. Tsukidate، نويسنده , , M. Suemitsu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1999
Pages :
5
From page :
148
To page :
152
Abstract :
Si 100.surface, when fully saturated with PH3at room temperature, shows up uPs0.25 ML and u Hs0.75 ML. Based on this fact, a method has been developed to digitally control the phosphorus coverage as u Ps1y 0.75.n, where n is the number of sequence consisting of saturated adsorption of PH3and thermal desorption of H2. The good agreement of the experiment with this formula indicates that PH3 molecules do not chemisorb at P sites at room temperatures. q1999 Elsevier Science B.V. All rights reserved.
Keywords :
Phosphine , Hydrogen desorption , Si 100. , Phosphorus , In situ doping , Temperature-programmed desorption
Journal title :
Applied Surface Science
Serial Year :
1999
Journal title :
Applied Surface Science
Record number :
995801
Link To Document :
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