Strained semiconductors structures: simulation of the thin films heteroepitaxial growth

We have performed an atomic-scale simulation of 100. thin films heteroepitaxial growth of semiconductors with zincblende structure by associating a Monte Carlo technique with an energy model based on the valence force field approximation. It is shown that grooves showing 111.facets are formed in the early stages of the growth owing to enhanced interlayer migrations. The strain relief can be achieved within a few atomic layers, in agreement with experimental observations. q1999 Elsevier Science B.V. All rights reserved.