Abstract :
Ta films were deposited by sputtering on chemically vapor deposited CVD.diamond plates to be used as resistors for
microelectronic applications. The resistance temperature coefficient is only y10 ppmr8C when heating Ta film resistance
from room temperature to 1508C. Meanwhile, no reaction is found at the interface between Ta and CVD diamond. These
results show the Ta film resistance has high electrical and chemical stability in this temperature range. On the basis of data
obtained by differential thermal analysis DTA., it is found that the endothermic effects begin to appear for TarCVD
diamond from 3008C. After heating TarCVD diamond up to 8008C, XRD analysis indicates that there are strong chemical
reactions between Ta and CVD diamond to produce TaC, TaO, and TaO2. q1999 Elsevier Science B.V. All rights reserved.
