In situ and real-time ellipsometry monitoring of submicron titanium nitridertitanium silicide electronic devices

We fabricated AlrTiN r TirSi.=15rSi 100.submicron devices by magnetron sputtering. Spectroscopic Ellipsometry x SE. was used for in situ characterization of TiN , Ti and Si layers. The intermixing of TirSi layers and the phase x transformations of TiSi during annealing were monitored by Kinetic Ellipsometry KE.. The metallic behavior of the TiNx layers was studied by analyzing their dielectric function in the IR region, measured by Fourier Transform InfraRed Spectroscopic Ellipsometry FTIRSE., and by the unscreened plasma energy "vpu.calculated by SE data analysis. q2000 Elsevier Science B.V. All rights reserved