Title of article
IR-RTI oscillations during laser induced epitaxial GaN film growth and the role of free carrier concentration
Author/Authors
B. Hu¨ttner، نويسنده , , M. Gross، نويسنده , , William T. Rupp، نويسنده , , H. Schro¨der، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
263
To page
268
Abstract
In this paper, we report on the growth of high quality GaN films by a laser assisted process, optimized for the growth of
epitaxial nitrides. Growth mode and film thickness were controlled in situ by the measurement of infrared-radiation
transmission intensity IR-RTI.oscillations. In the case of a light absorbing film, these oscillations are damped. A model is
presented to fit the experimental data and to determine the free carrier concentration during deposition. Comparison with
room temperature RT.values from Hall measurements showed a satisfying agreement. q2000 Elsevier Science B.V. All
rights reserved.
Keywords
GaN , Hall measurements , Laser induced molecular beam epitaxy , IR-RTI oscillations
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
995927
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