IR-RTI oscillations during laser induced epitaxial GaN film growth and the role of free carrier concentration

In this paper, we report on the growth of high quality GaN films by a laser assisted process, optimized for the growth of epitaxial nitrides. Growth mode and film thickness were controlled in situ by the measurement of infrared-radiation transmission intensity IR-RTI.oscillations. In the case of a light absorbing film, these oscillations are damped. A model is presented to fit the experimental data and to determine the free carrier concentration during deposition. Comparison with room temperature RT.values from Hall measurements showed a satisfying agreement. q2000 Elsevier Science B.V. All rights reserved.