Atomistic comparative study of VUV photodeposited silicon nitride on InP 100/ by simulation and atomic force microscopy

We report on an accurate validation of a new Monte Carlo three-dimensional model. Simulations up to 1200 A° layer thickness have been carried out for amorphous thin film layers of SiN:H deposited at low temperature 400–650 K.on 100. InP, by vacuum ultraviolet VUV, ;185 nm.-induced chemical vapor deposition CVD.. The computer simulations in the mesoscopic-submicronic range are compared with atomic force microscopy and index of refraction measurements. The reconstituted surface roughness and the voids discrete representations of the bulk are found to be in good agreement with these measurements. Simultaneously at around 450 K at ;1758C., thermal characteristic evolution of the both surface roughness and bulk porosity showed a transition from rough to smooth deposition and from low to high density. q2000 Elsevier Science B.V. All rights reserved.