Laser doping in Si, InP and GaAs

Experimental results on laser solid-phase doping of Si, GaAs and InP are presented. Using 1 kW CO2 laser, we fabricated ultra-shallow p–n junctions and Ohmic contacts with these semiconductors. The impurity distribution into the depth of the doped layers has been studied through the Auger electron spectroscopy AES.. The zero-bias resistance of formed GaAs p–n junctions was ;1010 V and a typical resistance of nonrectifying contacts with GaAs and InP was 5P10y7 VPcm2 and 5P10y5 VPcm2, respectively. q2000 Elsevier Science B.V. All rights reserved