Title of article
Laser doping in Si, InP and GaAs
Author/Authors
A. Pokhmurska )، نويسنده , , O. Bonchik، نويسنده , , S. Kiyak، نويسنده , , G. Savitski، نويسنده , , A. Gloskovsky، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
712
To page
715
Abstract
Experimental results on laser solid-phase doping of Si, GaAs and InP are presented. Using 1 kW CO2 laser, we
fabricated ultra-shallow p–n junctions and Ohmic contacts with these semiconductors. The impurity distribution into the
depth of the doped layers has been studied through the Auger electron spectroscopy AES.. The zero-bias resistance of
formed GaAs p–n junctions was ;1010 V and a typical resistance of nonrectifying contacts with GaAs and InP was
5P10y7 VPcm2 and 5P10y5 VPcm2, respectively. q2000 Elsevier Science B.V. All rights reserved
Keywords
Semiconductor , device fabrication , CW CO2 laser irradiation , diffusion , Doped layers
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996000
Link To Document