Abstract :
Photoluminescence PL.measurements on CdTerGaAs heterostructures grown by molecular beam epitaxy MBE.were
carried out to investigate the effect of the lattice mismatch and the thermal expansion on the strain due to the CdTe epitaxial
layer thickness in CdTerGaAs heterostructures. The PL peak of the acceptor bound exciton shifts toward the higher-energy
side with increasing CdTe film thickness. A new theoretical equation obtained from the strain on the lattice-mismatched
heterostructure is proposed. The values of the strains determined from the PL measurements were in reasonable agreement
with those determined from the new theoretical calculations taking into account the lattice mismatch together with the
thermal expansion difference between the CdTe epilayers and the GaAs substrates. These results can help improve the
understanding of the structural properties of CdTerGaAs heterostructures. q2000 Elsevier Science B.V. All rights reserved
