Abstract :
Nickel monosilicide NiSi.has been well recognized as a promising silicide for future ULSI devices. It can have low
resistivity of 15 mV cm on deep submicron lines and after high temperature )6008C.annealing. This work studies the
resistivity and thermal stability of thin NiSi layer on B, As, P-doped and in situ boron doped deep submicron polycrystalline
silicon poly-Si.lines after 500–8008Cr1 h of annealing. The stability of NiSi on crystalline silicon c-Si., poly-Si and
amorphous silicon a-Si.film will also be studied. q2000 Elsevier Science B.V. All rights reserved
