A real-time RBS study of the reaction of Tb and Dy with SiO2

A total of 3000 A°Tb followed by 200 A°Si to reduce oxidation of Tb during annealing.was deposited onto SiO2. The samples were annealed at 5008C from 7 to 97 min in HV. Rutherford backscattering RBS.studies were performed on the annealed Tb on SiO2 samples. A real-time RBS technique was also used to study the effect of annealing. The sample was quickly heated to 3208C and, thereafter, ramped at 18Crmin up to 6008C. A similar experiment was repeated with Dy but without a capping Si layer. The real-time RBS technique for SiO2rDy was done by heating the sample quickly to 5208C and keeping it constant at this temperature. The SiO2rTb sample was transformed to SiO2 substrate.rsilicideroxide the reaction of the cap layer ignored. after 7 min at 5008C. After prolonged annealing at high temperatures, both the SiO2rTb and SiO2rDy samples were transformed to SiO2 substrate.rmetal oxidermetal silicide with oxygen.rmetal oxide. q2000 Published by Elsevier Science B.V. All rights reserved.