Abstract :
In this work, we study the deposition of palladium by a non-conventional plasma sputtering technique. The metal atom
source is a biased wire which is sputtered by argon ions present in an HF-excited plasma. Two energetic plasma species
ions and metastable atoms.impinge onto the substrate surface during deposition and thus, may influence the growth. The
flux of metastable atoms can be evaluated to 1014 atomsrcm2 with a potential energy of 12 eV. Electrical measurements of
the plasma performed by the Langmuir probe allow the evaluation of the ion flux. It is of the order of 1014 ionsrcm2 s for a
kinetic energy of 50 eV. The respective effect of both species cannot be separated but, since ions carry higher energy, they
are expected to play the major role. Thus, comparison is made with conventional ion beam-assisted deposition techniques,
for which the ion flux vs. metal atom flux ratio is low values F0.1 against 10 in plasma sputtering technique.and the
incoming ion energy is high: of the order of hundreds or thousands of electron volts. Information on the film growth in these
particular conditions are obtained by transmission electron microscopy TEM.analysis of deposits performed on carbon
membrane coating copper grids.and by grazing incidence small angle X-ray scattering GISAXS. characterization of
Pdramorphous SiO2 deposits. In the present plasma conditions 100 mTorr argon pressure and y100 V wire bias., 3D
clusters are found to be formed which grow in size and coalesce to form meandering islands. After the coalescence step,
when the fractional covered area is sufficiently high, it is evidenced that the simultaneous energetic species flux causes a
reorganization of the meandering aggregates, and further, the formation of more compact islands composed of bigger
elementary clusters. This is attributed to a rise of the mobility of metal atoms and small clusters under bombardment. q2000
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