Fabrication and transport properties of 50-nm-wide AurCrrGaInAs electrode for electron wave interference device

To conduct Young’s double slit experiment using a semiconductor, fabrication techniques for 80 to 100-nm-period fine electrodes with 30 to 40-nm thickness are reported. To obtain a resist pattern suitable for the lift-process, we used a double-layer resist with ZEP-520 and PMMA. The mixing of C60 into both layers and rinsing by perfluorohexane PFH. prevented pattern collapse. As a result, a AurCr pattern with a 80-nm period over 30-nm steps was obtained. Using the developed process, we fabricated a device for observing the interference pattern. Unfortunately, the collector current from each electrode was not uniform. Moreover, the current showed anomalous behavior. The current occasionally converged in two different points and sudden jumps from the lower converged point to the upper converged point were also observed in time-dependent measurements. Such anomalous behavior might be explained in terms of a change in the ionization of an impurity near the metal–semiconductor interface. q2000 Elsevier Science B.V. All rights reserved.