SeS assisted bonding of GaAs to Si–A new method for wafer 2 bonding

A new technique namely chemical bonding by surface modification CBSM.has been developed to bond GaAs thin films on Si substrate. The bonded GaAs epilayer, detached from its orginal substrate in conjunction with epitaxial lift-off ELO. process, possessed smooth surface morphology and exhibited uniform bonding across the interface. The X-ray full width at half maximum FWHM.of 16 arc-sec from double crystal X-ray diffraction DCD.and no peak wavelength shift from photoluminscence PL.measurements reflected the high crystalline quality of the bonded films. The depth profile by XPS revealed at the interface the occurrence of surface modification. The surface modification resulted in the formation of Ga2Se3and SiS2, which attributed for the strong and high quality bonding between GaAs and Si. q2000 Elsevier Science B.V. All rights reserved