MBE growth and electroluminescence of ferromagneticrnon-magnetic semiconductor pn junctions based on Ga,Mn/As

Molecular beam epitaxial MBE.growth of novel hybrid ferromagneticrnon-magnetic semiconductor pn junction light emitting diodes LEDs.is presented. The ferromagnetic p-type Ga,Mn.As layers were grown on i- In,Ga.Asrn-GaAs structures to form LED structures. The current–voltage I–V.characteristics and the electroluminescence EL.spectra were measured at temperatures from 5 K to room temperature. In comparison to the properties of control samples consisting of all non-magnetic p-GaAsr In,Ga.Asrn-GaAs LEDs, the EL intensity of ferromagneticrnon-magnetic pn junction LEDs exhibited unique temperature dependence. q2000 Published by Elsevier Science B.V.