Direct evaluation of atomic layer intermixing via disordering in ALE grown GaAs/ GaP/ system

Atomic layer intermixing at pseudomorphic interfaces has been evaluated directly by changing of electronic states due to disordering in GaAs. GaP. ms2, 3, 4.superlattice grown by atomic layer epitaxy ALE.. The results show the critical m 1 change of the electronic structures due to atomic layer intermixing at GaAsrGaP hetero interface. The interdiffusion coefficients are about two orders of magnitude higher than values of the self-diffusion. It is suggested that microscopic and inhomogeneous strain effects are closely related to the exchange of neighboring atoms at the interface. q2000 Elsevier Science B.V. All rights reserved