Title of article :
Self-formed In Ga As quantum dot-like laser grown by metal 0.2 0.8 organic chemical vapor deposition on Si substrate
Author/Authors :
Zaman Iqbal Kazi، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
4
From page :
540
To page :
543
Abstract :
We report the growth of self-formed InGaAs quantum dot QD.and the fabrication of self-formed In0.2Ga0.8As QD-like laser on Si substrate by metal organic chemical vapor deposition MOCVD.. The dots are grown by Stransky–Krastanov S–K.growth mode. The laser shows room temperature continuous wave CW.light output with a threshold current density of 1.32 kArcm2 and a lasing wavelength of 854 nm. q2000 Elsevier Science B.V. All rights reserved.
Keywords :
Si substrate , Metal organic chemical vapor deposition , continuous wave , Emission spectrum , Quantum dot-like laser
Journal title :
Applied Surface Science
Serial Year :
2000
Journal title :
Applied Surface Science
Record number :
996220
Link To Document :
بازگشت