Abstract :
Thin films of b-In2S3, obtained by physical vapor deposition process followed by a post-annealing, are studied on bare
glass substrates and those coated with SnO2, In2O3and ZnO transparent conductive oxides TCOs.. These films have an
optical band gap of about 2.8 eV, good covering efficiency, and n-type conductivity, making them good candidates for
buffer layer in CuInSe2 solar cells. The structural, optical and morphological properties of these bilayers have been studied
with X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy depth profiling, and optical
transmission. All results show that our method of synthesis allows us to grow b-In2S3 films on glass and TCO-coated glass
coated substrates. Moreover, these films are exempt from pinholes, cracks, or other morphological defaults even for very
small thickness. q2000 Elsevier Science B.V. All rights reserved.
