Abstract :
We investigate the self-formation of Si atomic lines and dimer vacancy chains on the b-SiC 100. surface by atom
resolved scanning tunneling microscopy STM.. We show that, using a rigorous protocol in surface preparation, it is possible
to build very long, very straight and defect-free Si atomic lines. These lines are derived from the dimer rows of the
b-SiC 100. 3=2 surface reconstruction by selective Si removal resulting, at the initial step, in very long dimer line
vacancies. Using the capability of the scanning tunneling microscope to probe simultaneously both filled and empty
electronic states, we confirm that these atomic lines are composed of Si–Si dimers perpendicular to the line direction. These
Si atomic lines are derived from the b-SiC 100.3=2 surface dimer rows by surface thermal dismantling including, at the
initial step, Si removal ‘‘dimer row by dimer row’’ leaving very long dimer line vacancies. On the 3=2 surface, the Si–Si
dimers are asymmetric in marked contrast with the dimers forming the Si atomic lines that are symmetric. Such a behavior is
understood in terms of decreased lateral interaction between atomic lines when the spacing between them is increased. These
highly stable atomic lines reveal a novel aspect of SiC in its ability to also be a very suitable material in nanotechnologies
and micrornano-electronics of the future. q2000 Elsevier Science B.V. All rights reserved.
