Title of article :
Macrostep and mound formation during AlGaAs growth on
vicinal GaAs 110/ studied by scanning tunneling microscopy
Author/Authors :
Shigehiko Hasegawa، نويسنده , , Katsuhito Arakawa، نويسنده , , Hiroki Oooka، نويسنده , , Hisao Nakashima، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Abstract :
Scanning tunneling microscopy connected with molecular beam epitaxy MBE.is used to investigate configurations of
macrosteps formed by MBE growth of AlGaAsrGaAs superlattices on an atomic scale. It is found that macrosteps consist of
step bunches and vicinal 110.terraces. The former contain higher density of steps. More interestingly, the latter are covered
with a lot of semicircular-shaped mounds consisting of atomic steps with 110. terraces several tens of nm wide. Our
findings provide new insight into the mechanism of the macrostep formation. q2000 Elsevier Science B.V. All rights
reserved.
Keywords :
GaAS , Step bunching , Vicinal surface , Mound , Scanning tunneling microscopy , Molecular beam epitaxy
Journal title :
Applied Surface Science
Journal title :
Applied Surface Science
