Title of article
Flat-band voltage control of a back-gate MOSFET by single ion implantation
Author/Authors
Takahiro Shinada، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
5
From page
499
To page
503
Abstract
In order to control the electrical characteristics of semiconductor fine structures, several tens of single-dopant ions were
implanted one by one into sub-micron semiconductor regions by means of single ion implantation SII.. The flat-band
voltage of the implanted test samples a back-gate MOSFET.were measured by the extrapolation of the linear part of
substrate bias VBG.–drain current ID.characteristics to VBG axis. The flat-band voltage decreased linearly with the number
of implanted ions. The linear relationship between the flat-band voltage and the number of implanted ions verifies the
controllability of device characteristics with the SII. The increase in the flat-band voltage per one dopant atom has been
found to be y4.5 mVrion in this study. q2000 Elsevier Science B.V. All rights reserved
Keywords
Impurity , Fluctuation , Dopant number , Doping , Single ion implantation , Focused ion beam
Journal title
Applied Surface Science
Serial Year
2000
Journal title
Applied Surface Science
Record number
996369
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