Title of article :
Probing the internal structure of nanowires
Author/Authors :
A.B. McLean، نويسنده , , I.G. Hill، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
5
From page :
620
To page :
624
Abstract :
Si 111.–In 4=1.is a fascinating quasi-1D system that contains a repeated nanowire motif. The nanowires contain only two rows of In atoms. We demonstrate that it is possible to infer the spacing between the rows from a study of the dispersion of the image state band, measured using inverse photoemission. Our analysis suggest that the rows of In atoms are separated by 4"0.5 A° . This value is in excellent agreement with estimates of the spacing by both STM and surface X-ray diffraction. q2000 Elsevier Science B.V. All rights reserved.
Keywords :
Semiconductor surfaces , nanowires , Atom wires , One-dimensional system , Inverse photoemission , Electronic states
Journal title :
Applied Surface Science
Serial Year :
2000
Journal title :
Applied Surface Science
Record number :
996388
Link To Document :
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