Structural characterization of Si Ge rSi strained superlattices 1yx x and relaxed virtual substrates grown by chemical vapor deposition

We present SiGerSi 001. heteroepitaxy performed in a commercial Chemical Vapor Deposition CVD. cold-wall vertical reactor using SiH4and GeH4as precursor gases. This versatile machine operates in a wide range of temperature and pressure, allowing both the Ultra High Vacuum UHV.and the Low Pressure LP.-CVD. The growth of Si0.71Ge0.29rSi strained superlattices SLs.at 6008C and Si0.75Ge0.25rSi relaxed pseudo-substrates at 7008C is demonstrated using UHV and LP, respectively, and their structural properties are discussed. Finally, results of a first attempt of growing an undoped resonant tunneling like heterostructure onto a Si0.75Ge0.25 Íirtual substrate VS.are reported. q2000 Elsevier Science B.V. All rights reserved