Abstract :
Vicinal silicon surfaces auto-organise in a very systematic way, creating stepped surfaces and facets. The driving forces
for these morphological changes are the intrinsic material properties governed by the need to minimise the surface free
energy. Depending on their initial crystallographic orientation hkl.and the individual misorientation, very different final
morphologies have been observed. Systematic changes in the surface morphology and the associated atomic surface
structures can be studied in a very straightforward way on concave-shaped silicon surfaces. These samples contain a wide
range of polar misorientation angles and all azimuthal directions. In the present paper, we summarise previous results
obtained with scanning tunnelling microscopy on concave silicon samples with an initial 111.and 100.orientation and
additional measurements on Si 211.and 322.. Some remarks on the more open Si 110.surface will also be given. q2000
Published by Elsevier Science B.V.
